瑞银：中国未来十年难以追赶ASML极紫外光微影技术

瑞银集团分析师发布报告指出，中国半导体制造能力在未来10年内仍难以赶上荷兰ASML的尖端极紫外光(EUV)微影技术1。根据专利活动判断，中国目前的技术成熟度约相当于ASML 2004年的发展阶段1。

报告指出，美国主导的芯片设备出口限制措施阻碍了中国的技术进展1。不过瑞银预计，中国将在2至5年内具备大规模制造深紫外线(DUV)微影机的能力1。此外，路透社7月底曾引述消息人士证实中国开始生产国产DUV设备1。

UBS Group analysts have released a report forecasting that China's semiconductor manufacturing capabilities will struggle to catch up with Dutch firm ASML's cutting-edge extreme ultraviolet (EUV) lithography technology over the next ten years 1. According to the assessment, China's current technological level is equivalent to where ASML stood in 2004 1. Based on patent activity analysis, the report indicates that China's technical maturity corresponds to a stage approximately 15 years before ASML began mass-producing EUV lithography equipment 1.

The analysts attribute China's technological lag partly to U.S.-led export restrictions on chip manufacturing equipment 1. However, the report projects that China will possess the capability for large-scale production of deep ultraviolet (DUV) lithography machines within two to five years 1. ASML remains prohibited from selling its advanced EUV lithography systems to China 1.