三星计划在下一代旗舰自研芯片Exynos 2700中采用2nm SF2P制程与SbS封装架构，将峰值主频从上代的3.9GHz提升至4.20GHz1。SbS（Side-by-Side并排封装）是三星基于扇出型晶圆级封装技术开发的创新方案1，通过将SoC与DRAM内存水平并排布局而非垂直堆叠，能够实现内存带宽30%-40%的提升1。
这一架构创新改变了手机芯片的传统供应链分工模式，将为掌握自研芯片与内存产能的厂商构筑技术壁垒1。对于缺乏自主芯片设计和内存生产能力的手机厂商而言，这一技术方向无疑带来了新的挑战1。
Samsung is planning to integrate Side-by-Side (SbS) packaging architecture into its next-generation flagship self-developed processor, the Exynos 2700, manufactured using 2nm SF2P process technology 1. This advanced packaging approach represents a significant departure from conventional chip design methodology, positioning Samsung to potentially establish a substantial competitive advantage in the smartphone processor market.
The SbS packaging architecture, developed by Samsung based on fan-out wafer-level packaging (FOWLP) technology, arranges the system-on-chip (SoC) and DRAM memory horizontally side-by-side rather than stacking them vertically 1. This horizontal integration strategy delivers a notable performance improvement, enabling memory bandwidth enhancement of 30 to 40 percent 1. Accompanying these architectural upgrades, the Exynos 2700 is expected to achieve peak clock speeds of 4.20 GHz, a substantial increase from the previous-generation Exynos 2600's 3.9 GHz 1.
The implementation of SbS technology introduces a fundamental shift in semiconductor supply chain organization, potentially creating formidable technical barriers within the industry 1. This structural change poses considerable challenges for smartphone manufacturers lacking proprietary chip design capabilities and independent memory production capacity 1.
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