长鑫存储于2026年7月27日在上海证券交易所上市，首日收盘市值达3.28万亿元，超越工商银行[1]。作为国内首家规模化DRAM制造企业，长鑫在2026年第一季度实现营收508亿元、归母净利润247.62亿元，净利润同比增长1688.30%[1]。在全球DRAM市场中，长鑫已占据8%的份额，全球排名第四[1]。
长鑫从2016年项目启动至今实现了从技术突破到产能爆发的转变[1]。公司于2019年9月投产首条12英寸晶圆产线并产出首片8GB DDR4内存芯片[1]。经历2023年亏损163.40亿元、2024年亏损71.45亿元后，长鑫在2025年全年营收达617.99亿元，同比增长155.62%，归母净利润18.75亿元，实现首次扭亏为盈[1]。长鑫动态存储芯片基地总投资达1500亿元[1]。
以长鑫为核心，合肥围绕半导体产业构建了完整的生态系统[1]。目前合肥集聚超过400家集成电路企业，相关A股公司超过30家[1]。产业规模持续扩大，合肥集成电路产业产值从2016年的180亿元增长至2025年的1514亿元，年复合增长率超过26%[1]。2026年第一季度，合肥GDP为3229.6亿元，同比增长6.8%，在29个万亿城市中增速排名第一[1]。
Changshin Storage, China's first large-scale DRAM manufacturer and a key player in Hefei's semiconductor ecosystem, listed on the Shanghai Stock Exchange on July 27, 2026, with a closing market capitalization of 3.28 trillion yuan, surpassing Industrial and Commercial Bank of China [1]. The milestone marks the culmination of a decade-long journey from project inception to market leadership, with the company achieving substantial profitability and global market penetration.
The company's financial performance has accelerated dramatically in recent quarters. In the first quarter of 2026, Changshin reported revenue of 50.8 billion yuan, a 719.13 percent year-over-year increase, and net profit attributable to shareholders of 24.762 billion yuan, up 1,688.30 percent from the prior year [1]. The turnaround from sustained losses—16.34 billion yuan in 2023 and 7.145 billion yuan in 2024—to a full-year net profit of 1.875 billion yuan in 2025 underscores the company's transition to profitability [1]. Globally, Changshin's DRAM market share climbed consistently throughout 2025, reaching 8 percent by the fourth quarter and maintaining that position in the first quarter of 2026, placing it fourth worldwide [1].
Changshin's development has catalyzed broader semiconductor growth in Hefei. The company commenced production at its first 12-inch wafer fabrication line in September 2019 and produced its first 8GB DDR4 memory chip that same month, representing a critical technological milestone [1]. With an initial budget of 18 billion yuan and eventual total investment of 150 billion yuan in the dynamic memory chip base, the project has anchored Hefei's integrated circuit sector [1]. The city now hosts over 400 integrated circuit enterprises, generating industrial output valued at 151.4 billion yuan in 2025, up from approximately 18 billion yuan in 2016—a compound annual growth rate exceeding 26 percent [1]. These developments contributed to Hefei recording first-quarter 2026 GDP of 3,229.6 billion yuan, representing 6.8 percent year-over-year growth and the fastest expansion rate among 29 cities with trillion-yuan economies [1].