三星明年HBM4和HBM4E产能将翻倍增长

三星电子计划大幅扩产高带宽存储芯片，明年HBM4和HBM4E芯片产能将实现超过一倍的增长1。为支撑这一扩产计划，三星将玻璃载体外包清洗量从今年的每月20,000张提升至明年的50,000张，增幅达2.5倍1。

业界预计三星整体HBM产能将从今年的约18万晶圆增至明年的约25万晶圆，增幅接近40%1。其中，HBM4系列芯片的产能占比将大幅提高，从今年约40%上升至明年约80%1。三星于今年2月开始批量生产采用10纳米工艺DRAM和4纳米工艺底层芯片的HBM4产品1，并在5月向包括英伟达在内的客户提供了12层HBM4E样品1。

Samsung Electronics plans to significantly expand its high-bandwidth memory chip output in the coming year. The company will increase its glass substrate outsourcing volume from 20,000 units per month this year to 50,000 units per month next year, representing a 2.5-fold increase.1 Industry forecasts indicate that Samsung's overall HBM production capacity will grow from approximately 180,000 wafers this year to around 250,000 wafers next year, an increase of nearly 40 percent.1

The shift toward HBM4 and HBM4E chips will be particularly pronounced in Samsung's product mix. HBM4 series production is anticipated to rise from approximately 40 percent of total HBM output this year to roughly 80 percent next year.1 Samsung commenced mass production of HBM4 chips in February using 10-nanometer process technology for DRAM and 4-nanometer process technology for the substrate layer, and delivered 12-layer HBM4E samples to customers including NVIDIA in May.1