莱斯大学的研究人员发现，仅有数原子层厚的二氧化钌薄膜在晶格应变的作用下可以展现反铁磁性特征，这对通常被认为是非磁性的该材料的理解提出了挑战1。研究团队利用自旋分辨角分辨光电子能谱技术测量了电子自旋结构，确认了这一意外的磁性行为1。
研究表明，晶格应变可作为一种"调节旋钮"来诱导或控制磁性表现1。这一发现对自旋电子学应用和新型计算机存储器设计具有潜在价值1。该研究成果已发表在《科学进展》期刊2026年第31期上，由莱斯大学的Ming Yi、明尼苏达大学的Bharat Jalan以及Paul Scherrer研究所的Milan Radovic等研究人员完成1。该项研究获得了美国能源部、Gordon and Betty Moore基金会和Robert A. Welch基金会的资助1。
Researchers at Rice University have discovered that ultrathin ruthenium dioxide—a material ordinarily considered non-magnetic in bulk form—can exhibit antiferromagnetic properties when subjected to lattice strain 1. The finding, published in Science Advances in 2026, demonstrates that mechanical deformation acts as a tunable control mechanism for inducing and manipulating magnetic behavior in two-dimensional materials 1.
The team measured electron spin textures using spin-resolved angle-resolved photoemission spectroscopy to detect the magnetic signatures induced by strain 1. According to researcher Yichen Zhang, lattice strain functions as an adjustable "knob" that can be manipulated to induce or control antiferromagnetism, opening pathways for applications in spintronics and next-generation computer memory technologies 1. The work was led by Ming Yi at Rice University in collaboration with Bharat Jalan from the University of Minnesota and Milan Radovic from Paul Scherrer Institute, and was supported by the U.S. Department of Energy, the Gordon and Betty Moore Foundation, and the Robert A. Welch Foundation 1.
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