2026年8月27日，美国莱斯大学、明尼苏达大学与保罗谢尔研究所的研究团队发现，超薄二氧化钌薄膜在晶格应变下呈现交替磁性1。研究指出，二氧化钌在块体形态下通常被认为无磁性，但当其被制成仅几个原子层厚的超薄薄膜并施加晶格应变后，其电子自旋结构呈现出与交替磁性（altermagnetism）一致的特征1。
研究团队使用自旋分辨角分辨光电子能谱技术测量自旋纹理1。这一发现表明，可通过晶格应变作为调控手段诱导或控制交替磁性1。研究成果发表于《Science Advances》1。研究由美国能源部、Gordon and Betty Moore Foundation及Robert A. Welch Foundation资助1。这一发现有望应用于下一代自旋电子学和计算机存储架构1。
Scientists from Rice University, the University of Minnesota, and the Paul Scherrer Institute have discovered that ruthenium dioxide exhibits altermagnetism when fabricated into an ultrathin film just a few atomic layers thick and subjected to lattice strain 1. While ruthenium dioxide is generally considered non-magnetic in its bulk form, the ultrathin film displays a spin texture consistent with altermagnetism under these specific conditions 1. To measure this spin texture, the research team utilized spin-resolved angle-resolved photoemission spectroscopy 1. The findings of this study, conducted in the United States, were published in the journal Science Advances on August 27, 2026 1.
This discovery demonstrates that lattice strain can serve as an effective tuning mechanism to induce or control altermagnetism 1. The ability to manipulate this unique form of magnetism holds significant promise for future applications in next-generation spintronics and computer memory architectures 1. The research was financially supported by the U.S. Department of Energy, the Gordon and Betty Moore Foundation, and the Robert A. Welch Foundation 1.
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